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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?ce 500vcoolmos?cepowertransistor IPA50R500CE datasheet rev.2.0 final powermanagement&multimarket
2 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet to-220fp 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceseriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard mosfetintargetapplications.theresultingdevicesprovideallbenefits ofafastswitchingsjmosfetwhilenotsacrificingeaseofuse. extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforconsumergradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingpwm stagesfore.g.pcsilverbox,adapter,lcd&pdptvandlighting. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 550 v r ds(on),max 0.5 w q g,typ 18.7 nc i d,pulse 24 a e oss @ 400v 2.02 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks IPA50R500CE pg-to 220 fullpak 5r500ce see appendix a d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - - - 7.6 5.4 3.4 a t c = 25c; to-220 t c = 25c; to-220 fullpak t c = 100c; to-220 fullpak pulsed drain current 2) i d,pulse - - 24 a t c =25c avalanche energy, single pulse e as - - 129 mj i d =2.9a; v dd = 50v avalanche energy, repetitive e ar - - 0.20 mj i d =2.9a; v dd = 50v avalanche current, repetitive i ar - - 2.9 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power disspiation p tot - - 28.0 w t c =25c operating and storage temperature t j , t stg -40 - 150 c - mounting torque - - - 50 ncm m2.5 screws continuous diode forward current i s - - 4.6 a t c =25c diode pulse current 2) i s,pulse - - 24.0 a t c = 25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c maximum diode commutation speed 3) di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c insulation withstand voltage for to-220 fullpak v iso - - 2500 v v rms , t c =25c, t =1min 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 4.46 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 500 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.2ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =500v, v gs =0v, t j =25c v ds =500v, v gs =0v, t j =150c gate-source leakage curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.45 1.17 0.50 - w v gs =13v, i d =2.3a, t j =25c v gs =13v, i d =2.3a, t j =150c gate resistance r g - 3 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 433 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 31 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 25 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 100 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 6 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w rise time t r - 5 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w turn-off delay time t d(off) - 30 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w fall time t f - 12 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 2.3 - nc v dd =400v, i d =2.9a, v gs =0to10v gate to drain charge q gd - 10 - nc v dd =400v, i d =2.9a, v gs =0to10v gate charge total q g - 18.7 - nc v dd =400v, i d =2.9a, v gs =0to10v gate plateau voltage v plateau - 5.3 - v v dd =400v, i d =2.9a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.85 - v v gs =0v, i f =2.9a, t j =25c reverse recovery time t rr - 180 - ns v r =400v, i f =2.9a,d i f /d t =100a/s reverse recovery charge q rr - 1.2 - c v r =400v, i f =2.9a,d i f /d t =100a/s peak reverse recovery current i rrm - 12 - a v r =400v, i f =2.9a,d i f /d t =100a/s d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet 5electricalcharacteristicsdiagrams powerdissipation(fullpak) t c [c] p tot [w] 0 40 80 120 160 0 10 20 30 40 p tot =f( t c ) max.transientthermalimpedance(fullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t safeoperatingarea(fullpak)tj=25c v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p safeoperatingarea(fullpak)tj=80c v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet typ.outputcharacteristicstj=25c v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs typ.outputcharacteristicstj=125c v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 0.80 1.00 1.20 1.40 1.60 1.80 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 98% typ r ds(on) =f( t j ); i d =2.3a; v gs =13v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 0 5 10 15 20 25 30 150 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 10 400 v 120 v v gs =f( q gate ); i d =2.9apulsed;parameter: v dd avalancheenergy t j [c] e as [mj] 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 e as =f( t j ); i d =2.9a; v dd =50v drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -50 -25 0 25 50 75 100 125 150 440 460 480 500 520 540 560 580 v br(dss) =f( t j ); i d =1ma d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss = f (v ds ) forwardcharacteristicsofreversediode v sd [v] i f [a] 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
11 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet 6testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
12 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet 7packageoutlines figure1outlinepg-to220fullpak,dimensionsinmm/inches d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054
13 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet 8appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054
14 500vcoolmos?cepowertransistor IPA50R500CE rev.2.0,2014-06-12 final data sheet revisionhistory IPA50R500CE revision:2014-06-12,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-06-12 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054

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